IRF540NL【PDF 2/11 页】MOSFET N-CH 100V 33A TO-262

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IRF540NS/IRF540NL

Electrical Characteristics @ T J = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V (BR)DSS

Drain-to-Source Breakdown Voltage

100 ––– ––– V V GS = 0V, I D = 250μA

? V (BR)DSS / ? T J

Breakdown Voltage Temp. Coefficient

–––

0.12 –––

V/°C

Reference to 25°C, I D = 1mA ?

R DS(on)

Static Drain-to-Source On-Resistance

––– ––– 44 m ?

V GS = 10V, I D = 16A

?

μA

––– ––– 100 V GS = 20V

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

2.0 ––– 4.0 V V DS = V GS , I D = 250μA

21 ––– ––– S V DS = 50V, I D = 16A ? ?

––– ––– 25 V DS = 100V, V GS = 0V

––– ––– 250 V DS = 80V, V GS = 0V, T J = 150°C

nA

––– ––– -100 V GS = -20V

––– ––– 71 I D = 16A

––– ––– 14 nC V DS = 80V

––– 35 ––– I D = 16A

––– 39 ––– R G = 5.1 ?

Q gd

t d(on)

t r

t d(off)

t f

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

––– ––– 21 V GS = 10V, See Fig. 6 and 13

––– 11 ––– V DD = 50V

ns

––– 35 ––– V GS = 10V, See Fig. 10 ? ?

??

L D

L S

Internal Drain Inductance

Internal Source Inductance

–––

–––

4.5 –––

7.5 –––

nH

Between lead,

6mm (0.25in.)

from package

and center of die contact

G

D

S

C iss

C oss

C rss

E AS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Single Pulse Avalanche Energy ??

––– 1960 ––– V GS = 0V

––– 250 ––– V DS = 25V

––– 40 ––– pF ? = 1.0MHz, See Fig. 5 ?

––– 700 ? 185 ? mJ I AS = 16A, L = 1.5mH

Source-Drain Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Conditions

A

integral reverse

p-n junction diode.

I S

I SM

V SD

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) ?

Diode Forward Voltage

MOSFET symbol

––– ––– 33

showing the

G

––– ––– 110

––– ––– 1.2 V T J = 25°C, I S = 16A, V GS = 0V ?

D

S

t rr

Q rr

t on

Notes:

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

––– 115 170 ns T J = 25°C, I F = 16A

––– 505 760 nC di/dt = 100A/μs ??

Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )

? Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11)

? Starting T J = 25°C, L =1.5mH

R G = 25 ? , I AS = 16A. (See Figure 12)

? I SD ≤ 16 A , di/d t ≤ 340A/μs, V DD ≤ V (BR)DSS ,

T J ≤ 175°C

? Pulse width ≤ 400μs; duty cycle ≤ 2%.

2

? This is a typical value at device destruction and represents

operation outside rated limits.

? This is a calculated value limited to T J = 175°C .

? Uses IRF540N data and test conditions.

**When mounted on 1" square PCB (FR-4 or G-10 Material). For

recommended footprint and soldering techniques refer to application

note #AN-994

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